Dual panel type organic electroluminescent display device and method of fabricating the same

ABSTRACT

An organic electroluminescent device includes: a switching element and a driving element connected to each other on a substrate including a pixel region; a planarization layer on the switching element and the driving element, the planarization layer having a substantially flat top surface; a cathode on the planarization layer, the cathode connected to the driving element; an emitting layer on the cathode; and an anode on the emitting layer.

This application is a divisional of U.S. patent application Ser. No.11/639,301 filed Dec. 15, 2006 now U.S. Pat. No. 7,816,161, which claimspriority to Korean Patent Application No. 10-2006-059350, filed on Jun.29, 2006, which are hereby incorporated by reference for all purposes asif fully set forth herein.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an organic electroluminescent device(OELD), and more particularly to a top emission type OELD.

2. Discussion of the Related Art

In general, an OELD emits light by injecting electrons from a cathodeand holes from an anode into an emission layer, combining the electronswith the holes, generating an exciton, and transitioning the excitonfrom an excited state to a ground state. In comparison to a liquidcrystal display (LCD) device, an additional light source is notnecessary for the OELD to emit light, because the transition of theexciton between the two states causes light to be emitted. Accordingly,the size and weight of the OELD are less than the LCD device.

The OELD has other excellent characteristics, such as a low powerconsumption, superior brightness, and a fast response time. Thus, theOELD is seen as the preferred display for the next-generation ofconsumer electronic applications such as cellular phones, car navigationsystems (CNSs), personal digital assistants (PDAs), camcorders, palmtopcomputers, etc. Moreover, because fabricating the organic ELD isperformed with fewer processing steps, the OELD is less expensive toproduce than the LCD device.

In addition, the two types of OELDs are a passive matrix OELD and anactive matrix OELD. While both of the passive and active matrix OELDshave a simple structure and are formed by a simple fabricating process,the passive matrix OELD requires a relatively large amount of power tooperate. In addition, the display size of the passive matrix OELD islimited by the width and thickness of conductive lines used in thestructure. Further, as the number of conductive lines increases, theaperture ratio of the passive matrix OELD decreases. In contrast, theactive matrix OELDs are highly efficient and may produce a high-qualityimage on a large display with a relatively low power.

Turning now to FIG. 1, which is a schematic cross-sectional view of anOELD 1 according to the related art. As shown, the OELD 1 includes firstand second substrates 12 and 28 facing and being spaced apart from eachother. Also included is an array element layer 14 formed on the firstsubstrate 12. As shown, the array element layer 14 includes a thin filmtransistor “T.” Although not shown, the array element layer 14 furtherincludes a gate line, a data line crossing the gate line to define apixel region “P,” and a power line crossing one of the gate and datalines. In addition, the OELD 1 also includes a first electrode 16 on thearray element layer 14, an organic electroluminescent (EL) layer 18 onthe first electrode 16, and a second electrode 20 on the organic ELlayer 18. In addition, the first electrode 16 is connected to the thinfilm transistor “T.” Here, the organic EL layer 18 includes red (R),green (G) and blue (B) sub-organic EL layers in the pixel regions “P.”

In addition, the second substrate 28 functions as an encapsulating panelhaving a receded portion 21. A desiccant 22 is packaged in the recededportion 21 to protect the OELD 1 from moisture. Further, a seal pattern26 is formed between the first and second substrates 12 and 28 at aperiphery thereof so as to attach the first and second substrates 12 and28 to each other.

Next, FIG. 2 is an equivalent circuit diagram of the related art ELDshown in FIG. 1. As shown in FIG. 2, a pixel region “P” is defined by agate line 42 and a data line 44 crossing the gate line 42 formed on asubstrate 32. Also included is a power line 55 spaced parallel from thegate line 42 and crossing the data line 44.

In addition, a switching element “T_(S)” is connected to the gate anddata lines 42 and 44 in an area adjacent to where the gate and datalines 42 and 44 cross, and a driving element “T_(D)” is connected to theswitching element “T_(S).” For example, the driving element “T_(D)” inFIG. 2 is a positive type thin film transistor. Further, a storagecapacitor “C_(ST)” is formed between the switching element “T_(S)” andthe driving element “T_(D).” Also, a drain electrode 63 of the drivingelement “T_(D)” is connected to a first electrode (not shown) of anorganic EL diode “E.” In addition, a source electrode 66 of the drivingelement “T_(D)” is connected to the power line 55 and a gate electrode68 is connected to the capacitor Cst and switching element Ts.

Hereinafter, operation of the OELD will be explained in detail. When agate signal is applied to the gate electrode 46 of the switching element“Ts,” a current signal applied to the data line 44 is changed into avoltage signal through the switching element “Ts” and is applied to thegate electrode 68 of the driving element “T_(D).”

Therefore, the driving element “T_(D)” is driven and the level of thecurrent applied to the organic EL diode “E” is determined such that theorganic EL diode “E” may display a gray scale. Further, because thesignal in the storage capacitor “Cst” functions to maintain the signalof the gate electrode 68 of the driving element “T_(D),” the currentapplied to the EL diode is maintained until the next signal is appliedeven if the switching element “Ts” is in an OFF state.

Next, FIG. 3 is a schematic plan view of a related art OELD with respectto one pixel. As shown, the switching element “TS,” the driving element“T_(D)” connected to the switching element “Ts,” and the storagecapacitor “Cst” are formed on the substrate 32 in the pixel region “P.”Alternatively, the switching element “Ts” and the driving element“T_(D)” may be formed in multiple in the pixel region “P” in accordancewith an operation characteristic thereof

In addition, the substrate 32 includes a transparent insulatingsubstrate such as glass or a plastic substrate. The gate line 42 isformed on the substrate 32 and the data line 44 crosses the gate line 42to define the pixel region “P.” In addition, in this example, a powerline 55 is parallel to the data line 44.

Further, the switching element “Ts” includes the gate electrode 46connected to a first gate line 42, a first semiconductor layer 50 overthe first gate electrode 46, a first source electrode 56 connected tothe data line 44, and a first drain electrode 60 spaced apart from thefirst source electrode 56. The driving element “T_(D)” includes thesecond gate electrode 68 connected to the drain electrode 60, a secondsemiconductor layer 62 over the second gate electrode 68, the secondsource electrode 66 connected to the power line 55, and the second drainelectrode 63. Specifically, the first drain electrode 60 and the gateelectrode 68 are connected to each other via a contact hole 64 of aninsulating material layer (not shown).

Further, a first electrode 36 is connected to the first drain electrode63 in the pixel region “P.” Although not shown, the storage capacitor“Cst” includes a first storage electrode of doped silicon, a secondstorage electrode occupying a portion of the power line 55, and aninsulating material layer (not shown) between the first and secondstorage electrodes.

FIG. 4 is a schematic cross-sectional view of the related art OELD takenalong the line “IV-IV” in FIG. 3. In FIG. 4, the second semiconductorlayer 62 is formed on the substrate 32, a gate insulating layer “GI” isformed on the second semiconductor layer 62, the gate electrode 68 isformed on the gate insulating layer “GI” over the second semiconductorlayer 62, and an interlayer insulating layer “IL” is formed on the gateelectrode 68 and includes first and second contact holes “C1” and “C2”that expose both end portions of the second semiconductor layer 62. Thesource and drain electrodes 66 and 63 are formed on the interlayerinsulating layer “IL” and are connected to the second semiconductorlayer 62 via the first and second contact holes “C1” and “C2.”

A passivation layer 67 is also formed on the second source and drainelectrodes 66 and 63 and includes a drain contact hole “C3” that exposesa portion of the drain electrode 63. The first electrode 36 is connectedto the drain electrode 63 via the drain contact hole “C3,” the organicEL layer 38 is formed on the first electrode 36, and a second electrode80 is formed on the organic EL layer 38. The first electrode 36, theorganic EL layer 38, and the second electrode 80 constitute the organicEL diode “E.” Further, the driving element “T_(D)” is a negative typeTFT, and the first electrode 36 and the second electrode 80 are acathode and an anode, respectively. Alternatively, the driving element“T_(D)” is a positive type TFT, and the first electrode 36 and thesecond electrode 80 are an anode and a cathode, respectively.

In addition, the storage capacitor “Cst” and the driving element “T_(D)”are disposed in a row. Here, the source electrode 66 is connected to thesecond storage electrode, and the first storage electrode 35 is disposedunder the second storage electrode 34.

FIG. 5 is a schematic cross-sectional view of an emission region of therelated art. In FIG. 5, the emission region of the OELD 1 includes theanode 36 on the substrate 32, a hole injection layer 38 a on the anode36, a hole transport layer 38 b on the hole injection layer 38 a, anemitting layer 38 c on the hole transport layer 38 b, an electrontransport layer 38 d on the emitting layer 38 c, an electron injectionlayer 38 e on the electron transport layer 38 d, and the cathode 80 onthe electron injection layer 38 e. These layers are sequentially layeredon the anode 36.

In addition, the hole transport layer 38 b and the electron transportlayer 38 d function to transport a hole and electron to the emittinglayer 38 c to improve an emitting efficiency. Further, the holeinjection layer 38 c between the anode 36 and the hole transport layer38 b function to reduce a hole injecting energy, and the electroninjection layer 38 e between the cathode 80 and the electron transportlayer 38 d function to reduce an electron injecting energy, therebyincreasing the emitting efficiency and reducing the driving voltage ofthe OELD.

Further, the cathode 80 is formed of a material including calcium (Ca),aluminum (Al), aluminum alloy, magnesium (Mg), silver (Ag) and lithium(Li). In addition, the anode 36 includes a transparent conductivematerial such as indium tin oxide (ITO). Thus, because the anode 36formed with a transparent conductive material such as ITO is depositedby sputtering, layers under the anode 36 may be damaged. Therefore, toprevent damaging the emitting layer 38, the anode 36 is not formed onthe emitting layer 38.

Accordingly, when light from the emitting layer 38 is emitted toward theanode 36 formed under the emitting layer 38, the substantial apertureregion is limited due to the array element (not shown) under the anode36. Consequently, because the OELD related art is a bottom emission typeOELD, the brightness deteriorates due to the array element. Further, tominimize the aperture region, the design of the array element islimited. Also, the driving element is selected from a positive typepoly-silicon type in connection with the structure of the organic ELdiode, the array process is complicated and the product yield isreduced.

SUMMARY OF THE INVENTION

Accordingly, the present invention is directed to a duel panel typeorganic electroluminescent display device and method of fabricating thesame that substantially obviates one or more of the problems due tolimitations and disadvantages of the related art.

An advantage of the present invention is to address the above-noted andother problems.

Another advantage of the present invention is to provide an OELD and amethod of fabricating the same that may be driven as a top emission typeOELD with an improved brightness.

Another advantage of the present invention is to provide an OELD and amethod of fabricating the same that includes an array element formedthrough a simple process that reduces the product cost.

Another advantage of the present invention is to provide an OELD and amethod of fabricating the same that may prevent a division between anemitting layer due to a step difference on the array element.

Another advantage of the present invention is to provide an OELD and amethod of fabricating the same that may prevent shorting of an anode anda cathode by a damage of the emitting layer.

Additional features and advantages of the invention will be set forth inthe description which follows, and in part will be apparent from thedescription, or may be learned by practice of the invention. Theobjectives and other advantages of the invention will be realized andattained by the structure particularly pointed out in the writtendescription and claims hereof as well as the appended drawings.

To achieve these and other advantages and in accordance with the purposeof the present invention, as embodied and broadly described, an organicelectroluminescent device includes: a switching element and a drivingelement connected to each other on a substrate including a pixel region;a planarization layer on the switching element and the driving element,the planarization layer having a substantially flat top surface; acathode on the planarization layer, the cathode connected to the drivingelement; an emitting layer on the cathode; and an anode on the emittinglayer.

In another aspect of the present invention, a method of fabricating anorganic electroluminescent device includes: forming a switching elementand a driving element connected to each other on a substrate including apixel region; forming a planarization layer on the switching element andthe driving element, the planarization layer having a substantially flattop surface; forming a cathode on the planarization layer, the cathodeconnected to the driving element; forming an emitting layer on thecathode; and forming an anode on the emitting layer.

In another aspect of the present invention, a method of fabricating anorganic electroluminescent device includes: forming a gate line and apower line spaced apart from each other on a substrate; forming a gateinsulating layer on the gate line and the power line; forming a dataline on the gate insulating layer, the data line crossing the gate line;forming a switching element connected to the gate and data line, and adriving element connected to the switching element, the switchingelement including a first gate electrode, a first semiconductor layer, afirst source electrode, and a first drain electrode, the driving elementincluding a second gate electrode, a second semiconductor layer, asecond source electrode, and a second drain electrode; forming aplanarization layer on the switching element and the driving element;etching the planarization layer to form a drain contact hole thatexposes a portion of the second drain electrode; forming a cathode onthe planarization layer, the cathode connected to the second drainelectrode via the drain contact hole; forming an emitting layer on thecathode; and forming an anode on the emitting layer.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory and areintended to provide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this specification, illustrate embodiments of the invention andtogether with the description serve to explain the principles of theinvention.

In the drawings:

FIG. 1 is a schematic cross-sectional view of a related art OELD;

FIG. 2 is an equivalent circuit diagram of the related art OELD;

FIG. 3 is a schematic plan view of the related art OELD with a respectto one pixel region;

FIG. 4 is a schematic cross-sectional view of the related art OELD takenalong the line “IV-IV” in FIG. 3;

FIG. 5 is a schematic cross-sectional view of an emission region of therelated art OELD;

FIG. 6 is a schematic cross-sectional view of an OELD according to anembodiment of the present invention;

FIG. 7 is a schematic plan view of an array substrate of an OELD “EL”according to an embodiment of the present invention;

FIGS. 8A to 8D are schematic cross-sectional views of an organic ELDtaken along lines “VIIIa-VIIIa,” “VIIIb-VIIIb,” “VIIIc-VIIIc,” and“VIIId-VIIId” of FIG. 7 according to an embodiment of the presentinvention; and

FIGS. 9A to 9E, 10A to 10E, 11A to 11E and 12A to 12E, which areschematic cross-sectional views in accordance with a fabricating processof an OELD taken along lines “VIIIa-VIIIa”, “VIIIb-VIIIb”, “VIIIc-VIIIc”and “VIIId-VIIId” in FIG. 7 according to an embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

Reference will now be made in detail to an embodiment, examples of whichare illustrated in the accompanying drawings.

FIG. 6 is a schematic cross-sectional view of an OELD according to anembodiment of the present invention. As shown in FIG. 6, the OELD “EL”includes an array element (not shown) on a substrate 100, a cathode 200on the array element, an electron injection layer 202 on the cathode200, an electron transport layer 204 on the electron injection layer202, an emitting layer 206 on the electron transport layer 204, a holetransport layer 208 on the emitting layer 206, a hole injection layer210 on the hole transport layer 208, and an anode 214 over the holeinjection layer 210.

Further, a buffer layer 212 may be disposed between the hole injectionlayer 210 and the anode 214 to prevent damage to the hole injectionlayer 210 during a deposition process by sputtering of the anode 214 ofITO or IZO. For example, the buffer layer 212 may include an organicmolecular material for the hole injection layer. Specifically, thebuffer layer 212 may be selected from one of an organic monomolecularmaterial having a crystallinity and an oxide including vanadiumpentoxide (V₂O₅). Also, the organic monomolecular material includescopper phthalocyanine (CuPc). Specifically, CuPc can be formed with athin thickness and have a low threshold voltage and a high mobility.

In addition, the anode 214 includes a transparent conductive materialsuch as ITO or IZO, and the cathode 200 includes molybdenum (Mo).Generally, although the cathode 200 is selected from a metallic materialhaving a low work function such as calcium (Ca), aluminum (Al), aluminumalloy, magnesium (Mg), silver (Ag), or lithium (Li), the metallicmaterial having a low work function is easily oxidized by being exposedto moisture and air during the mask process. Accordingly, the cathode200 includes Mo having a non-oxidation characteristic or may furtherinclude a buffer layer between the cathode 200 and the electroninjection layer 202. Specifically, the buffer layer may be etched whenpatterning a passivation layer (not shown) on the buffer layer toconnect the cathode 200 and a drain electrode of the driving element“T_(D).”

As explained above, because the anode 214 is formed on top of the OELD,the OELD is a top emission type, thereby improving an aperture ratio.Also, although not shown, the cathode 200 is connected to a drainelectrode of a driving element that is a negative type TFT, therebyreducing the number of manufacturing processing steps and thus theproduct cost. Furthermore, because the oxidation of the cathode 200 isprevented, process defects are prevented.

It is noted that a planarization layer (not shown) is disposed under thecathode 200 to planarizing a step difference on a surface of the arrayelement.

Next, FIG. 7 is a schematic plan view of an array substrate of an OELD“EL” according to an embodiment of the present invention. In FIG. 7, theswitching element “Ts” and the driving element “T_(D)” connected theswitching element “Ts” are formed on the substrate 100 in a pixel region“P.”

The switching element “Ts” may be a negative thin film transistorincluding a first gate electrode 102, a first semiconductor layer 118, afirst source electrode 122 a, and a first drain electrode 122 b. Inaddition, the driving element “T_(D)” is a negative thin film transistorincluding a second gate electrode 104, a second semiconductor layer 120,a second source electrode 124 a and a second drain electrode 124 b.Specifically, the driving element “T_(D)” is connected to the switchingelement “Ts” by connecting the second gate electrode 104 to the firstdrain electrode 122 b.

The first semiconductor and second semiconductor layers 118 and 120include amorphous silicon, and the switching element “Ts” and thedriving element “T_(D)” are formed in a structure to improve anoperation characteristic of the OELD. For example, the first sourceelectrode 122 a has a “U” shape and the first drain electrode 122 b hasa bar shape extending into the first source electrode 122 a and beingspaced apart from the electrode 122 a. Also, the second source electrode124 a has a ring shape and the second drain electrode 124 b has acircular shape contained within and separated from the second sourceelectrode 124 a.

By the channel structures of the switching element “Ts” and the drivingelement “T_(D),” the channel length (not shown) is reduced and thechannel width (not shown) is increased, thereby maximizing the channelwidth and minimizing the thermallization of the OELD.

In addition, a gate line 106 is formed on the substrate 100 along afirst direction and is connected to the first gate electrode 102 toapply a scanning signal to the first gate electrode 102. A data line 126crosses the gate line 106 to define the pixel region “P” and isconnected to the first source electrode 122 a to apply a data signal tothe first source electrode 122 a. In addition, a power line 110 isparallel to and is spaced apart from the gate line 106.

Further, a gate pad 108, a data pad 128 and a power pad 114 are formedat end portions of the gate line 106, the data line 126 and the powerline 110, respectively. Furthermore, a gate pad terminal 136, a data padterminal 140 and a power pad terminal 138 are connected to the gate pad108, the data pad 128 and the power pad 114, respectively. For example,the gate pad terminal 136, the data pad terminal 140 and the power padterminal 138 include a transparent conductive material such as indiumtin oxide (ITO) or indium zinc oxide (IZO).

Meanwhile, although not shown, a storage capacitor “Cst” includes afirst storage electrode extending from the first drain electrode 122 b,a second storage electrode extending from the power line 110, and aninsulating layer between the first storage electrode and the secondstorage electrode. In other words, the first storage electrode, theinsulating layer and the second storage electrode are sequentiallylayered.

In addition, a cathode 134 as a first electrode is connected to thesecond drain electrode 124 b. Although not shown, an emitting layer (notshown) is formed on the cathode 134 and an anode (not shown) is formedas a second electrode on the emitting layer.

Here, the first semiconductor and second semiconductor layers 118 and120 include amorphous silicon, and the switching element “Ts” and thedriving element “T_(D)” are formed in a structure to improve anoperation characteristic of the OELD. For example, the first sourceelectrode 122 a has a “U” shape and the first drain electrode 122 b hasa bar shape extending into the first source electrode 122 a spaced apartfrom the electrode 122 a. Also, the second source electrode 124 a has aring shape and the second drain electrode 124 b has a circular shapecontained within and separated from the second source electrode 124 a.

By the channel structures of the switching element “Ts” and the drivingelement “T_(D),” the channel length (not shown) is reduced and thechannel width (not shown) is increased, thereby maximizing the channelwidth and minimizing the thermallization of the OELD.

Next, FIGS. 8A, 8B, 8C and 8D are schematic cross-sectional views of anorganic ELD taken along lines “VIIIa-VIIIa,” “VIIIb-VIIIb,”“VIIIc-VIIIc,” and “VIIId-VIIId” of FIG. 7 according to an embodiment ofthe present invention. In more detail, FIG. 8A illustrates a switchingregion “S,” a driving region “D” and a storage region “C” defined on thesubstrate 100. FIGS. 8B, 8C and 8D illustrate a gate region “GA,” apower region “VA” parallel to the gate region “GA,” and a data region“DA” perpendicular to the gate region “GA” and the power region “VA,”respectively.

As shown in FIG. 8A, the switching element “Ts” and the driving element“T_(D)” connected to the switching element “Ts” are formed in theswitching region “S” and the driving region “D,” respectively. Further,as discussed above with respect to FIG. 7 and as shown in FIG. 8A, theswitching element “Ts” includes the first gate electrode 102, the firstsemiconductor layer 118, the first source electrode 122 a, and the firstdrain electrode 122 b. Further, the driving element “T_(D)” includes thesecond gate electrode 104, the second semiconductor layer 120, thesecond source electrode 124 a, and the second drain electrode 124 b. Asshown in FIG. 7, the gate line 106 is formed along a first direction onthe substrate 100, the power line 110 is parallel to and is spaced apartfrom the gate line 106, and the data line 126 crosses the gate line 106to define the pixel region “P.”

In the storage region “C” (not shown), a first storage electrode extendsfrom the first drain electrode 122 b, and a second storage electrodeextends from the power line 110. Further, a gate insulating layer 116 isdisposed on the first storage electrode. In addition, as shown in FIG.8A, the cathode 134 is connected to the second drain electrode 124 b, anemitting layer 144 is formed on the cathode 134, and an anode 148 isformed on the emitting layer 144. In addition, the cathode 134 includesan opaque metallic material and the anode 148 includes a transparentconductive material. That is, the OELD “EL” is driven as a top emissiontype device such that light from the emitting layer 144 is transmittedtoward the anode 148.

Also, the second gate electrode 104 is connected to the first drainelectrode 122 b via a contact hole of the gate insulating layer 116, andthe second source electrode 124 a is connected to the power line 110(shown in FIG. 7). Furthermore, a first passivation layer 142 is formedon the cathode 134 at a boundary between the pixel regions “P,” so theemitting layer 144 in each pixel region “P” is prevented from contactingeach other.

Further, as shown in FIG. 7, the gate pad 108, the data pad 128 and thepower pad 114 are formed at the end of the gate line 106, the data line126 and the power line 110, respectively. In addition, the gate padterminal 136, the data pad terminal 140 and the power pad terminal 138are connected to the gate pad 108, the data pad 128 and the power pad114, respectively. FIGS. 8B, 8C and 8D illustrate in cross-sectionalviews the gate pad 108, the power pad 114, and the data pad 128,respectively.

Further, a second passivation layer 130 is formed on the switchingelement “Ts,” the driving element “T_(D)” and the storage capacitor“C_(ST).” For example, the second passivation layer 130 includes aninsulating inorganic material such as silicon oxide (SiOx) or siliconnitride (SiNx).

It is noted that a planarization layer 132 is formed between the secondpassivation layer 130 and the cathode 134 to prevent the problem wherethe emitting layer 144 has a gap at the step difference on the arrayelement, shorting of electrodes occurs, or dark spot occurs due tothermallization of the emitting layer 144.

FIGS. 9A to 9E, 10A to 10E, 11A to 11E and 12A to 12E, which areschematic cross-sectional views in accordance with a fabricating processof an OELD taken along lines “VIIIa-VIIIa”, “VIIIb-VIIIb”, “VIIIc-VIIIc”and “VIIId-VIIId” in FIG. 7 according to an embodiment of the presentinvention. FIG. 7 will also be referred to in this description.

As shown in FIGS. 7 and 9A, the pixel region “P,” the switching region“S,” the driving region “D,” and the storage region “C” are formed onthe substrate 100. FIGS. 10A, 11A, and 12A illustrate the gate region“GA,” the power region “VA,” and the data region “DA,” respectively. Thedata region “DA” and the gate region “GA” define the pixel region “P”,and the power region “VA” is disposed at a region parallel to the gateregion “GA.” Further, as shown in FIG. 9A, the first and second gateelectrodes 102 and 104 are formed by depositing and patterning amaterial including aluminum (Al), aluminum alloy such as aluminumneodymium (AlNd), chromium (Cr), Mo, copper (Cu), and titanium (Ti) inthe switching region “S” and the driving region “D,” respectively. Inthe gate region “GA,” as shown in FIG. 7, the gate line 106 is connectedto the first gate electrode 102 and is formed on the substrate 100, andthe gate pad 108 is formed at end portion of the gate line 106. Further,the power line 110 is formed in the power region “VA,” and the power pad114 is formed at an end portion of the power line 110. The first storageelectrode 112 extending from the power line 110 is formed in the storageregion “C.”

Next, as shown in FIGS. 9A, 10A, 11A and 12A, the gate insulating layer116 is formed by depositing an inorganic insulating material such assilicon nitride (SiNx) or silicon oxide (SiOx) on the first gateelectrode 102, the second gate electrode 104 and the second storageelectrode 112. See also FIGS. 10B, 11B and 11C.

Next, first active and second active layers 118 a and 120 a are formedby depositing an intrinsic amorphous silicon on the gate insulatinglayer 116 in the switching region “S” and the driving region “D,”respectively. Sequentially, first and second ohmic contact layers 118 band 120 b are formed by depositing doped amorphous silicon on the firstactive and second active layers 118 a and 120 a, respectively. Here, thefirst active layer 118 a and the first ohmic contact layer 118 bconstitute a first semiconductor layer 118, and the second active layer120 a and the second ohmic contact layer 120 b constitute a secondsemiconductor layer 120.

Next, as shown in FIG. 9A, first and second contact holes “CH1” “CH2”are formed by etching the gate insulating layer 116 to expose a portionof the second gate electrode 104 and a portion of the first storageelectrode 112. As shown in FIG. 9B, the first source and first drainelectrodes 122 a and 122 b, the second source and second drainelectrodes 124 a and 124 b, and the data line 126 (of FIG. 7) are formedby depositing a conductive metallic material such as the same materialas the gate line 106 in the switching region “S,” the driving region “D”and the storage region “C,” respectively. Further, the second storageelectrode 122 c extends from the first drain electrode 122 b, the secondgate electrode 104 is connected to the first drain electrode 122 b viathe first contact hole “CH1,” and the second drain electrode 124 b isconnected to the second storage electrode 122 c via the second contacthole “CH2.”

Next, a portion of the first ohmic contact layer 118 b between the firstsource electrode 122 a and the first drain electrode 122 b is removed toexpose a portion of the first active layer 118 a corresponding to theportion of the first ohmic contact layer 118 b. Further, a portion ofthe second ohmic contact layer 120 b between the second source electrode124 a and the second drain electrode 124 b is removed to expose aportion of the second active layer 120 a corresponding to the portion ofthe second ohmic contact layer 120 b. Here, the exposed first active andsecond active layers 118 a and 120 a function as an active channel (notshown). In addition, as shown in FIG. 7, to reduce a channel length andto increase a channel width, the first source electrode 122 a may have“U” shape and the first drain electrode 122 b may be a bar shape.Alternatively, the second source electrode 124 a may have a ring shapeand the second drain electrode 124 b may have a circular shape.

In addition, the first gate electrode 102, the first semiconductor layer118, the first source electrode 122 a, and the first drain electrode 122b constitute the switching element “Ts.” Also, the second gate electrode104, the second semiconductor layer 120, the second source electrode 124a, and the second drain electrode 124 b constitute the driving element“T_(D).”

Next in FIG. 9C, the first passivation layer 130 is formed by depositingan inorganic insulating material on the switching element “Ts” and thedriving element “T_(D).” Next, a planarization layer 132 is formed bycoating an insulating organic material such as benzocyclobutene (BCB) oracrylic resin on the first passivation layer 130.

In this step, a third contact hole “CH3” is formed by etching the firstpassivation layer 130 and the planarization layer 132 to expose aportion of the second drain electrode 124 b.

Simultaneously, fourth, fifth and sixth contact holes “CH4,” “CH5,” and“CH6” are formed by etching the first passivation layer 130 and theplanarization layer 132 to expose portions of the gate pad 108, thepower pad 114, and the data pad 128, respectively (see also FIGS. 10C,11C and 12C).

In FIG. 9D, the cathode 134 is formed by depositing one of calcium (Ca),aluminum (Al), aluminum alloy, magnesium (Mg), silver (Ag), and lithium(Li) on the driving element “T_(D).” Specifically, the cathode 134 isconnected to the second drain electrode 124 b via the third contacthole“CH3.” In this step, the gate pad terminal 136, the power padterminal 138, and the data pad terminal 140 are formed using the samematerial as that of the cathode 134.

In this step, the gate pad terminal 136, the power pad terminal 138, andthe data pad terminal 140 are connected to the gate pad 108, the powerpad 114 and the data pad 128 via the fourth contact hole “CH4,” thefifth contact hole “CH5” and the sixth contact hole “CH6,” respectively.

Next, the second passivation layer 142 is formed on the cathode 134, thegate pad terminal 136, the power pad terminal 138, and the data padterminal 140. The second passivation layer 142 is etched to expose thecathode 134, the gate pad terminal 136, the power pad terminal 138, andthe data pad terminal 140. In other words, the second passivation layer142 remains at the peripheries of the cathode 132, the gate pad terminal136, the power pad terminal 138, and the data pad terminal 140.

Next, in FIGS. 9E, 10E, 11E and 12E, the emitting layer 144 is formedover the cathode 132. Further, as shown in FIG. 9E, the OELD includesthe electron injection layer “EIL” on the cathode 134, the electrontransport layer “ETL” on the electron injection layer “EIL,” the holetransport layer “HTL” on the emitting layer 144, the hole injectionlayer “HIL” on the hole transport layer “HTL,” and the buffer layer 146on the hole the injection layer “HIL.” In addition, the emitting layer144 includes red (R), green (G), and blue (B) sub-emitting layers. Ineach example, the emitting layer 144 is disposed in each pixel region“P.”

For example, the buffer layer 146 is selected from one of an organicmonomolecular material and an oxide, wherein the organic monomolecularmaterial has a crystallinity and the oxide includes vanadium pentoxide(V₂O₅). The organic monomolecular material includes copperphthalocyanine (CuPc).

Next, the anode 148 is formed by depositing and patterning a transparentconductive material such as indium tin oxide (ITO) or indium zinc oxide(IZO) on the buffer layer 146. Thus, through the above-noted processes,the top emission type organic ELD is manufactured.

In addition, the OELD according to the present invention is an invertedstructure such that a cathode of an opaque material is disposed as alower electrode and an anode of a transparent conductive material isdisposed as an upper electrode to form a top emission type OELD, therebyobtaining an improved aperture ratio without affecting the design of thearray element. Further, the switching and driving elements are negativetypes, thereby reducing a number of processes, product cost, andincreasing the stability of the circuit. More particularly, a defectwhere the emitting layer is excessively thinly deposited or is notdeposited in a step difference on the array element can be prevented.Therefore, the effect of thermallization of the emitting layer andshorting between electrodes may be prevented by forming theplanarization layer between the first passivation layer and the cathode.

As the present invention may be embodied in several forms withoutdeparting from the spirit or essential characteristics thereof, itshould also be understood that the above-described embodiments are notlimited by any of the details of the foregoing description, unlessotherwise specified, but rather should be construed broadly within itsspirit and scope as defined in the appended claims, and therefore allchanges and modifications that fall within the metes and bounds of theclaims, or equivalence of such metes and bounds are therefore intendedto be embraced by the appended claims.

It will be apparent to those skilled in the art that variousmodifications and variations can be made in the present inventionwithout departing from the spirit or scope of the invention. Thus, it isintended that the present invention cover the modifications andvariations of this invention provided they come within the scope of theappended claims and their equivalents.

1. A method of fabricating an organic electroluminescent device,comprising: forming a switching element and a driving element connectedto each other on a substrate including a pixel region; forming gate anddata lines connected to the switching element and crossing each other todefine the pixel region; forming a power line crossing one of the gateline and the data line; forming a planarization layer on the switchingelement and the driving element, the planarization layer having asubstantially flat top surface; forming a passivation layer of aninorganic insulating material between the planarization layer and theswitching element and between the planarization layer and the drivingelement; forming a cathode on the planarization layer, the cathodeconnected to the driving element; forming an electron injection layer onthe cathode, forming an electron transport layer on the electroninjection layer, forming an emitting layer on the electron transportlayer, forming a hole transport layer on the emitting layer, forming ahole injection layer on the hole transport layer, forming a buffer layeron the hole injection layer, and forming an anode on the buffer layer,wherein the cathode, the electron injection layer, the electrontransport layer, the emitting layer, the hole transport layer, the holeinjection layer, the buffer layer, and the anode are sequentiallyformed.
 2. The method according to claim 1, wherein forming the drivingelement includes forming a negative type thin film transistor includingforming a first gate electrode, forming a first semiconductor layercorresponding to the first gate electrode, forming a first sourceelectrode, and forming a first drain electrode spaced apart from thefirst source electrode, the first source and first drain electrodesconnected to end portions of the first semiconductor layer.
 3. Themethod according to claim 1, wherein forming the gate line, the dataline and the power line include forming a gate pad, a data pad and apower pad at the ends thereof, respectively.
 4. The method according toclaim 1, wherein forming the switching element includes forming a secondgate electrode connected to the gate line, forming a secondsemiconductor layer corresponding to the second gate electrode, forminga second source electrode connected to the data line, and forming asecond drain electrode spaced apart from the second source electrode,the second source and second drain electrodes connected to end portionsof the second semiconductor layer.
 5. The method according to claim 4,further comprising forming a storage capacitor including a first storageelectrode connected to the power line, a second storage electrodeconnected to the second drain electrode, and an insulating layer betweenthe first and second storage electrodes.